The 29th International Conference on Defects in Semiconductors will be held in Matsue city, Shimane prefecture, Japan, from July 31st to August 4th.

The conference will focus on fundamental properties and applications of electrically, optically and magnetically active point and extended defects in semiconductor materials for micro- and optoelectronics, spintronics, photovoltaics, etc. These include organic semiconductors, oxides, topological materials, both in bulk crystal and thin film forms as well as low-dimensional and nanoscale structures.

final, final version of program and author index

Program and author index have been finalized and updated.

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Lecturer of tutorials and time schedule has been updated.

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Registration of Tutorials

Tutorials will be held on Sunday, July 30th, 2017. Registration site of tutorials is now open.

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Special Topic on Defects in Semiconductors to be published in Journal of Applied Physics

The ICDS Committee and the Editor-in-Chief of Journal of Applied Physics are pleased to announce that Journal of Applied Physics will feature a Special Topic Section on Defects in Semiconductors. The Special Topic Section Defects in Semiconductors aims to deliver state-of-the-art finding and understanding of fundamentals of defects in semiconductors.

Information for Authors

What's new
Jul 21, 2017
NEW! Tutorials
Jul 07, 2017
Jul 07, 2017
Jun 26, 2017
Advance Program





J. A. Woollam Japan

J. A. Woollam Japan



GlobalWafers Japan Co., Ltd.

STR Japan K. K.

Rigaku Corp.

Stanley Electric Co., Ltd.

Fuji Electric Co., Ltd.

Spintronics Research Network of Japan

EAG Inc. Nano Science Corporation

Mutsumi Corporation

HiSOL, Inc.

Taiyo Nippon Sanso Corp.

Keysight Technologies

Toray Research Center Inc.