After the Conference

Many Thanks for the Successful Event

Dear all participants and attendees,

On behalf of the conference co-chairs and committees, we are pleased to share that the International Conference on Defects in Semiconductors (ICDS) 2017 was fruitfully completed as another success with 279 speakers from 32 countries.

We do greatly appreciate all session chairs, speakers and attendees and hope every attendee had a great time and opportunity to learn and share their research with one another.

We do greatly appreciate all the committees, session chairs, speakers and attendees for their supports and contributions to the ICDS 2017!

We greatly appreciate your supports to the ICDS and do wish you could join the 30th ICDS, July 21 - 26, 2019, Motif, downtown Seattle, USA, (ConferenceChair: Prof.Matthew D. McCluskey, Washington State University, USA.). We will send out the invitation in due course.

Once again, we greatly appreciate your supports to the ICDS 2017!

With best wishes,

Tetsuya YAMAMOTO, Conference Co-Chair
Kohei M. ITOH, Conference Co-Chair

2017 Corbett Prize winners

  • Liwen Sang, Independent scientist at NIMS, Japan (PhD in 2010) for work entitled: "Strain and dislocations in the InGaN-based intermediate-band solar cells"
  • Elena Pascal, PhD student at University of Strathclyde for work entitled: "Characterization of threading dislocations in nitrides by modeling contrast profiles observed in electron channeling contrast images"

The 29th International Conference on Defects in Semiconductors will be held in Matsue city, Shimane prefecture, Japan, from July 31st to August 4th.

The conference will focus on fundamental properties and applications of electrically, optically and magnetically active point and extended defects in semiconductor materials for micro- and optoelectronics, spintronics, photovoltaics, etc. These include organic semiconductors, oxides, topological materials, both in bulk crystal and thin film forms as well as low-dimensional and nanoscale structures.

final, final, final version of program and author index

Program and author index have been finalized and updated on July 27, 2017.

More Info


Lecturer of tutorials and time schedule has been updated.

More Info

Registration of Tutorials

Tutorials will be held on Sunday, July 30th, 2017. Registration site of tutorials is now open.

More Info

Special Topic on Defects in Semiconductors to be published in Journal of Applied Physics

The ICDS Committee and the Editor-in-Chief of Journal of Applied Physics are pleased to announce that Journal of Applied Physics will feature a Special Topic Section on Defects in Semiconductors. The Special Topic Section Defects in Semiconductors aims to deliver state-of-the-art finding and understanding of fundamentals of defects in semiconductors.

Information for Authors





J. A. Woollam Japan

J. A. Woollam Japan



GlobalWafers Japan Co., Ltd.

STR Japan K. K.

Rigaku Corp.

Stanley Electric Co., Ltd.

Fuji Electric Co., Ltd.

Spintronics Research Network of Japan

EAG Inc. Nano Science Corporation

Mutsumi Corporation

HiSOL, Inc.

Taiyo Nippon Sanso Corp.

Keysight Technologies

Toray Research Center Inc.