The 29th International Conference on Defects in Semiconductors will be held in Matsue city, Shimane prefecture, Japan, from July 31st to August 4th.

The conference will focus on fundamental properties and applications of electrically, optically and magnetically active point and extended defects in semiconductor materials for micro- and optoelectronics, spintronics, photovoltaics, etc. These include organic semiconductors, oxides, topological materials, both in bulk crystal and thin film forms as well as low-dimensional and nanoscale structures.

Preliminary version of program and timetable

Preliminary program and timetable are now available.

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Early Bird Registration Deadline: June 9, 2017, 23:59 pm JST (14:59 UTC)

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Registration of Tutorials

Tutorials will be held on Sunday, July 30th, 2017. Registration site of tutorials is now open.

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Special Topic on Defects in Semiconductors to be published in Journal of Applied Physics

The ICDS Committee and the Editor-in-Chief of Journal of Applied Physics are pleased to announce that Journal of Applied Physics will feature a Special Topic Section on Defects in Semiconductors. The Special Topic Section Defects in Semiconductors aims to deliver state-of-the-art finding and understanding of fundamentals of defects in semiconductors.

Information for Authors

What's new
Jun 22, 2017
NEW! Plenary / Invited Speakers
Jun 13, 2017
Jun 13, 2017
Jun 06, 2017
May 31, 2017
Advance Program





J. A. Woollam Japan

J. A. Woollam Japan



GlobalWafers Japan Co., Ltd.

STR Japan K. K.

Rigaku Corp.

Stanley Electric Co., Ltd.

Fuji Electric Co., Ltd.

Spintronics Research Network of Japan

EAG Inc. Nano Science Corporation

Mutsumi Corporation

HiSOL, Inc.

Taiyo Nippon Sanso Corp.

Keysight Technologies

Toray Research Center Inc.