ANNOUNCEMENT: Special Topic on Defects in Semiconductors to be published in Journal of Applied Physics
The ICDS Committee and the Editor-in-Chief of Journal of Applied Physics are pleased to announce that Journal of Applied Physics will feature a Special Topic Section on Defects in Semiconductors. The Special Topic Section Defects in Semiconductors aims to deliver state-of-the-art finding and understanding of fundamentals of defects in semiconductors. The Guest Editors for this Special Topic are Yasufumi Fujiwara (Osaka University), Tetsuya Yamamoto (Kochi University of Technology), and Kohei M. Itoh (Keio University).
The Journal of Applied Physics Special Topic Section on Defects in Semiconductors welcomes submissions from both the ICDS and the broader community of researchers working in the field. Please note that manuscripts considered for publication as Articles in Journal of Applied Physics are expected to meet Journal of Applied Physics’ standards of acceptance, i.e. to report on original and timely results that significantly advance understanding in the current status of contemporary applied physics: material that is exclusively review in nature is not considered for publication. Manuscripts submitted for consideration in this Special Topic must meet the same criteria and will undergo Journal of Applied Physics’ standard peer-review process. Journal of Applied Physics’ Editors’ Team will issue final decisions on the submitted manuscripts .
A call for papers to the broad community of defects in semiconductors will be issued in May, 2017 and will be posted also on this website. Submission will be open on Journal of Applied Physics online submission site in June, 2017. Deadline for submission will be October 31st, 2017. Accepted manuscripts received within the deadline will be published in the online Special Topic Issue as ready.
Further updates will be posted on the ICDS website as they will be available.
We look forward to receiving submissions for the Special Topic Section from the ICDS community!
On behalf of the Guest Editors,