Plenary / Invited Speakers

Plenary Speakers

  • Hisashi Furuya, SUMCO Corp., Japan,
    “Development and Mass-production of COP-free Si wafers”
  • Matthew D. McCluskey, Washington State University, USA,
    “Acceptors in oxide semiconductors: The p-type quest continues”
  • Su-Huai Wei, Beijing Computational Science Research Center, China,
    “First-principles study of defect control in photovoltaic materials”


Invited Speakers

  • Michel Bockstedte, University of Erlangen, Germany,
    “Spin and photo physics of defect centers in semiconductors”
  • Wei Chen, Catholic University of Louvain, Belgium,
    “First-principles determination of defect energy levels in semiconductors through hybrid functionals and GW”
  • Shigefusa F. Chichibu, Tohoku University, Japan,
    “Origin and properties of intrinsic Shockley-Read-Hall nonradiative recombination centers in wide bandgap (Al,Ga)N”
  • Cory Cress, US Naval Research Lab., USA,
    “Dopants and defects in graphene introduced via hyperthermal ion implantation”
  • Jaroslaw Dabrowski, IHP Frankfurt, Germany,
    “First-principle calculation on single vacancies, their complex formation and defect reactions in silicon crystals”
  • Cyrus E. Dreyer, Rutgers University, USA,
    “Sources of Shockley-Read-Hall recombination in III-nitride light emitters”
  • Jiangfeng Du, University of Science and Technology of China, China,
    “Quantum control of spins in diamond and its applications”
  • Elif Ertekin, University of Illinois at Urbana-Champaign, USA,
    “Recent developments in first-principles modeling of defects in semiconductors: High-accuracy, materials prediction, and stochastic error quantification”
  • Shunsuke Fukami, Tohoku University, Japan,
    “Spin-orbit torque memory devices for integrated-circuit applications”
  • Mitsuru Funato, Kyoto University, Japan,
    “Impact of point defects on the optical transition processes in AlN-based semiconductors”
  • Tom Gregorkiewicz, University of Amsterdam, The Netherlands,
    “Ultrafast spectroscopy of energy transfers between Si nanocrystals and Er ions”
  • Pham Nam Hai, Tokyo Institute of Technology, Japan,
    “Fe-doped ferromagnetic semiconductors for high-performance semiconductor spin devices”
  • Masataka Higashiwaki, NICT, Japan,
    “Gallium oxide-based devices for power electronics and emerging applications”
  • Kazunari Kurita, SUMCO Corp., Japan,
    “Proximity gettering of carbon cluster ion-implanted silicon wafers for CMOS image sensors: Gettering effects of transition metal, and light element impurities”
  • Susumu Maeda, GlobalWafers Japan Co., Japan,
    “Control of grown-in defects and oxygen precipitates in silicon wafers with DZ-IG structure by Ultrahigh-Temperature Rapid Thermal Oxidation”
  • Tadaharu Minato, Mitsubishi Electric Corporation, Japan,
    “How to handle a diversity of Si wafer material for bipolar power device: Varieties of residual oxygen and carbon in FZ, MCZ and Epitaxy”
  • Yuichi Nemoto, Niigata University, Japan,
    “Observation of vacancy orbital in silicon crystals using low-temperature ultrasonic measurements”
  • Kevin O’Donnell, Strathclyde University, UK,
    “Photochromism of Mg-related centres in Eu-implanted GaN”
  • Yohei Otoki, SCIOCS COMPANY LIMITED, Japan,
    “Relationship between defects and performances of GaN/GaAs electronic devices”
  • Lorenzo Rigutti, University of Rouen, France,
    “Correlating structural and functional properties of III-nitride heterostructures by atom probe-based multi-microscopy”
  • Hirofumi Seki, Toray Research Center, Inc., Japan,
    “Evaluation of defects and chemical bonds at the SiO2/Si and SiC interfaces”
  • Michael Stavola, Lehigh University, USA,
    “Microscopic structure and diffusivity of the interstitial hydrogenshallow-donor center in In2O3
  • Hidekazu Tsuchida, CRIEPI, Japan,
    “Carrier lifetime control in 4H-SiC epilayers by impurity doping”