Plenary / Invited Speakers

Plenary Speakers

    • Hisashi Furuya, SUMCO Corp., Japan,
      “Development and mass-production of COP-free Si wafers (tentative)”

    • Matthew D. McCluskey, Washington State University, USA,
      “Acceptors in oxide semiconductors: The p-type quest continues (tentative)”

  • Su-Huai Wei, Beijing Computational Science Research Center, China,
    “First-principles study of defect control in photovoltaic materials”

Invited Speakers (update is in progress)

    • Michel Bockstedte, University of Erlangen, Germany,
      “Spin and photo physics of defect centers in semiconductors”

    • Wei Chen, Catholic University of Louvain, Belgium,
      “First-principles determination of defect energy levels in semiconductors through hybrid functionals and GW”

    • Shigefusa F. Chichibu, Tohoku University, Japan,
      “Origin and properties of intrinsic Shockley-Read-Hall nonradiative recombination centers in wide bandgap (Al,Ga)N”

    • Cory Cress, US Naval Research Lab., USA,
      “Dopants and defects in graphene introduced via hyperthermal ion implantation”

    • Jaroslaw Dabrowski, IHP Frankfurt, Germany,
      “First-principle calculation on single vacancies, their complex formation and defect reactions in silicon crystals”

    • Cyrus E. Dreyer, Rutgers University, USA,
      “Sources of Shockley-Read-Hall recombination in III-nitride light emitters”

    • Jiangfeng Du, University of Science and Technology of China, China,
      “Quantum control of spins in diamond and its applications”

    • Elif Ertekin, University of Illinois at Urbana-Champaign, USA,
      “Recent developments in first-principles modeling of defects in semiconductors: High-accuracy, materials prediction, and stochastic error quantification”

    • Shunsuke Fukami, Tohoku University, Japan,

    • Mitsuru Funato, Kyoto University, Japan,
      “Impact of point defects on the optical transition processes in AlN-based semiconductors”

    • Tom Gregorkiewicz, University of Amsterdam, The Netherlands,
      “Ultrafast spectroscopy of energy transfers between Si nanocrystals and Er ions”

    • Pham Nam Hai, Tokyo Institute of Technology, Japan,
      “Fe-doped ferromagnetic semiconductors for high-performance semiconductor spin devices”

    • Masataka Higashiwaki, NICT, Japan,
      “Gallium oxide-based devices for power electronics and emerging applications”

    • Kazunari Kurita, SUMCO Corp., Japan,
      “Proximity gettering of carbon cluster ion-implanted silicon wafers for CMOS image sensors: Gettering effects of transition metal, and light element impurities”

    • Susumu Maeda, GlobalWafers Japan Co., Japan,
      “Control of grown-in defects and oxygen precipitates in silicon wafers with DZ-IG structure by Ultrahigh-Temperature Rapid Thermal Oxidation”

    • Tadaharu Minato, Mitsubishi Electric Corporation, Japan,
      “How to handle a diversity of Si wafer material for bipolar power device: Varieties of residual oxygen and carbon in FZ, MCZ and Epitaxy”

    • Yuichi Nemoto, Niigata University, Japan,
      “Observation of vacancy orbital in silicon crystals using low-temperature ultrasonic measurements (tentative)”

    • Kevin O’Donnell, Strathclyde University, UK,
      “Photochromism of Mg-related centres in Eu-implanted GaN”

    • Lorenzo Rigutti, University of Rouen, France,
      “Correlating structural and functional properties of III-nitride heterostructures by atom probe-based multi-microscopy”

    • Hirofumi Seki, Toray Research Center, Inc., Japan,
      “Evaluation of defects and chemical bonds at the SiO2/Si and SiC interfaces”

    • Michael Stavola, Lehigh University, USA,
      “Microscopic structure and diffusivity of the interstitial hydrogenshallow-donor center in In2O3

  • Hidekazu Tsuchida, CRIEPI, Japan,
    “Carrier lifetime control in 4H-SiC epilayers by impurity doping”